N28F001BX-T120 - Intel N28F001BX-T120 Flash Memory Parallel. 5V | 1M-Bit | 120ns...
- Part Number:
- N28F001BX-T120
- Model Number:
- N28F001BX-T120
- Make:
- INTEL
- Lead Time:
- Available
- Qty In Stock:
- Available
Intel N28F001BX-T120 Flash Memory Parallel. 5V | 1M-Bit | 120ns | 32-Pin PLCC Simple Type: Flash Memory
Intel's 28F001BX-B and 28F001BX-T combine the cost-effectiveness of Intel standard flash memory with features that simplify write and allow block erase. These devices aid the system designer by combining the functions of several components into one, making boot block flash an innovative alternative to EPROM and EEPROM or battery-backed static RAM. Many new and existing designs can take advantage of the 28F001BX's integration of blocked architecture, automated electrical reprogramming, and standard processor interface.
For Resellers and High Volume Orders:
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Features
- None Available
Specifications
- 100,000 Erase/Program Cycles: Per Block
- Advanced Packaging, JEDEC Pinouts: 32-Pin PDIP, 32-Lead PLCC, TSOP
- Deep Power-Down Mode: 0.05 mA ICC Typical, 0.8 mA IPP Typical
- ETOX II Nonvolatile Flash Technology: EPROM-Compatible Process Base, High-Volume Manufacturing Experience
- Hardware Data Protection Feature: Erase/Write Lockout during Power Transitions
- High-Integration Blocked Architecture: One 8 KB Boot Block w/Lock Out, Two 4 KB Parameter Blocks, One 112 KB Main Block
- High-Performance Read: 70/75 ns, 90 ns, 120 ns, 150 ns Maximum Access Time 5.0V g10% VCC
- Simplified Program and Erase: Automated Algorithms via On-Chip Write State Machine (WSM)
- SRAM: Compatible Write Interface
Applications
- None Available
Aliases
- None Available
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